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The realization of on-chip optical interconnects requires the integration of active micro-optical devices with microelectronics. However, it is not clear yet how silicon photonics could be integrated within CMOS chips. In this context the non-crystalline forms of silicon, such as laser-annealed polycrystalline and hydrogenated amorphous silicon (a-Si:H), can deserve some advantages as they can be included almost harmlessly everywhere in a CMOS typical run-sheet, yielding low-cost and flexible fabrication. In particular, a-Si:H can be deposited using the CMOS-compatible low temperature plasma enhanced chemical vapour deposition (PECVD) technique, which brings clear advantages particularly for a back-end photonic integrated circuit (PIC) integration. However, till now a-Si:H has been mainly considered for the objective of passive optical elements within a photonic layer at λ=1.55 μm. Only a small number of …
International Society for Optics and Photonics
Publication date: 
11 May 2012

Sandro Rao, Giuseppe Coppola, Mariano A Gioffrè, Francesco G Della Corte

Biblio References: 
Volume: 8431 Pages: 84310U
Silicon Photonics and Photonic Integrated Circuits III