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Type: 
Journal
Description: 
Dielectric aperiodic Thue‐Morse structures up to 128 layers have been realized by the porous silicon technology. Normal incidence reflectivity measurements have been performed to investigate the photonic properties of the devices. A partial photonic band gap region, centered at 1100 nm and 70 nm wide has been observed for the S6 and S7 Thue‐Morse structures. The S6 multilayer has been studied as sensor device on exposure to several chemical substances. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Publisher: 
WILEY‐VCH Verlag
Publication date: 
1 May 2007
Authors: 

Luca De Stefano, Ilaria Rea, Lucia Rotiroti, Luigi Moretti, Ivo Rendina

Biblio References: 
Volume: 4 Issue: 6 Pages: 1966-1970
Origin: 
physica status solidi c