We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current–voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.