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Type: 
Journal
Description: 
We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current–voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.
Publisher: 
North-Holland
Publication date: 
1 Aug 2006
Authors: 

T Cesca, A Verna, G Mattei, A Gasparotto, B Fraboni, G Impellizzeri, F Priolo

Biblio References: 
Volume: 249 Issue: 1-2 Pages: 894-896
Origin: 
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms