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Type: 
Journal
Description: 
Silicon nanowires (Si NWs) are the emerging nanostructures for future nanodevices. In this work we have prepared them by electron beam evaporation (EBE) through the vapor–liquid–solid (VLS) mechanism. We discuss the growth of epitaxial NWs by EBE and the possibility to control their orientation and length by changing the experimental conditions. Moreover, the effects of the surface contamination and of the Au cluster preparation on the NWs structural properties and density will be discussed. We demonstrate that any O contamination has to be avoided since just a very thin native SiO2 layer stops ad-atom diffusion on the surface and inhibits the NWs growth. Au cluster preparation has a determinant role too: by varying the procedure for their formation, it is possible to change NWs density and length. In particular, we observed that by evaporating Au on the heated substrate, the droplets active to promote NW …
Publisher: 
Elsevier
Publication date: 
26 Feb 2010
Authors: 

Emanuele F Pecora, Alessia Irrera, Francesco Priolo

Biblio References: 
Volume: 518 Issue: 9 Pages: 2562-2564
Origin: 
Thin Solid Films