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By means of high resolution x‐ray diffraction and photoluminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAs1−xNx/GaAs, the original tensile strain of the as‐grown material is reversed into a compressive one and that, at the same time, N atoms are electronically passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N‐H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully‐hydrogenated GaAs1−xNx/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs1−xNx/GaAs.
Publication date: 
10 Apr 2007

G Bisognin, D De Salvador, E Napolitani, M Berti, A Polimeni, M Felici, M Capizzi, M G√ľngerich, PJ Klar, G Bais, F Jabeen, M Piccin, S Rubini, F Martelli, A Franciosi

Biblio References: 
Volume: 893 Issue: 1 Pages: 155-156
AIP Conference Proceedings