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In this work we propose an alternative methodology to study B diffusion in crystalline Ge. We enhance B diffusion by means of passing implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value. A comparison between B diffusion occurring under implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion. Indeed, B diffusion is demonstrated to occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed. These results are a key point for a full comprehension of the B diffusion in Ge.
Publication date: 
26 Feb 2010

E Bruno, S Mirabella, G Scapellato, G Impellizzeri, A Terrasi, F Priolo, E Napolitani, D De Salvador, M Mastromatteo, A Carnera

Biblio References: 
Volume: 518 Issue: 9 Pages: 2386-2389
Thin Solid Films