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Type: 
Journal
Description: 
Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at EV + 0.357 eV where EV is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.
Publisher: 
AIP
Publication date: 
14 Dec 2013
Authors: 

A Nylandsted Larsen, H Juul Pedersen, M Christian Petersen, V Privitera, Y Gurimskaya, A Mesli

Biblio References: 
Volume: 114 Issue: 22 Pages: 223706
Origin: 
Journal of Applied Physics