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Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at~ 370 cm-1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at~ 300 cm-1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.
IOP Publishing
Publication date: 
11 Apr 2013

Andrea Sanson, Enrico Napolitani, Marco Giarola, Giuliana Impellizzeri, Vittorio Privitera, Gino Mariotto, Alberto Carnera

Biblio References: 
Volume: 6 Issue: 4 Pages: 042404
Applied Physics Express