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Type: 
Journal
Description: 
Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal treatments is elucidated. We have found that F, enriching the Ge matrix with vacancies strongly affects the electrical response of As-doped junctions. We also demonstrated that the F-interstitials clusters, formed next to the end-of-range region, have an acceptor-like behavior. These phenomena are characterized by chemical and electrical profiling analyses and by positron annihilation lifetime spectrometry.
Publisher: 
The Electrochemical Society
Publication date: 
1 Jan 2012
Authors: 

G Impellizzeri, E Napolitani, S Boninelli, JP Sullivan, Jason Roberts, SJ Buckman, Simon Ruffell, Francesco Priolo, V Privitera

Biblio References: 
Volume: 1 Issue: 3 Pages: Q44-Q46
Origin: 
ECS Journal of Solid State Science and Technology