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Type: 
Journal
Description: 
During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evaporated, n-type Schottky diodes are so simple displaying only one peak consisting of the merged E center and single-acceptor divacancy peaks, and no A center and double-acceptor divacancy peaks. With reference to a recent publication, we demonstrate that this is not due to a reduced production of divacancies and A centers in this situation but to the localization of these defects in highly defected regions.
Publisher: 
AIP
Publication date: 
1 Jan 2009
Authors: 

Vl Kolkovsky, V Privitera, A Nylandsted Larsen

Biblio References: 
Volume: 105 Issue: 1 Pages: 014501
Origin: 
Journal of Applied Physics