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In dilute nitrides [e.g., Ga(AsN), (InGa)(AsN)] the formation of stable N-2H-H complexes following H irradiation removes the effects nitrogen has on the optical (i.e., refractive index [1]), structural [2], and electronic [3] properties of the material. In particular, H binding to N atoms in GaAs 1-x N x leads to an increase in the band gap energy of the N-containing material (~1.33 eV for x = 1% at T = 5 K) up to the value it has in GaAs (1.52 eV at 5 K). Therefore, by allowing H incorporation only in selected regions of the sample - e.g., by deposition of H-opaque masks prior to the hydrogenation - it is possible to attain a spatially controlled modulation of the band gap energy in the growth plane. This technique, referred to as in-plane Band Gap Engineering, can be employed to tailor the carrier-confining potential down to a nm scale, resulting in the fabrication of site-controlled, dilute nitride-based quantum dots (QDs). We …
Publication date: 
5 Jul 2015

A Gerardino, S Birindelli, JS Wildmann, G Pettinari, L Businaro, A Polimeni, M Capizzi, S Rubini, F Martelli, A Rastelli, R Trotta, M Felici

Biblio References: 
Pages: 1-4
2015 17th International Conference on Transparent Optical Networks (ICTON)