Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high band gap material (1.7 eV) and enable the construction of all-crystalline Si tandem solar cells. However, Si nanocrystal formation involves high-temperature annealing which deteriorates the properties of any previously established selective contacts. The inter-diffusion of dopants during high-temperature annealing alters Si NC formation and limits the built-in voltage. Furthermore, most devices presented so far also involve electrically active ...