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Type: 
Conference
Description: 
Direct electron-beam lithography (EBL) was exploited to fabricate metamaterial devices operating in the terahertz (THz) region. Simulation show that, in order to reach the required frequency range, optimized metallic structures deposited on silicon must have submicron features. The effect of an external parameter, such as the substrate doping, is also studied.
Publisher: 
IEEE
Publication date: 
1 Jan 2009
Authors: 

N Chicki, E Di Gennaro, E Esposito, A Andreone

Biblio References: 
Pages: 11-12
Origin: 
2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications