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Theoretical predictions indicate that the n-type Ge/Si− Ge multi-quantum-well system is the most promising material for the realization of a Si-compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allows us to characterize the tunneling barrier parameters and, in turn …
American Physical Society
Publication date: 
2 Jan 2019

C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, L Baldassarre, MH Zoellner, O Skibitzki, G Scalari, J Faist, DJ Paul, M Scuderi, G Nicotra, T Grange, S Birner, G Capellini, M De Seta

Biblio References: 
Volume: 11 Issue: 1 Pages: 014003
Physical Review Applied