In 2004, two seminal papers on the preparation of graphene, a two-dimensional (2D) carbon-based material, put the scientific community in a frenzy [1, 2]. Not only did physicists and chemists become excited by the new material, but also the extraordinary high carrier mobilities observed in graphene caught the attention of the electronic device community and raised the expectation that graphene could be the perfect channel material for fast field-effect transistors (FETs) and replace conventional semiconductors in this field [3, 4]. Indeed, soon after the publication of References 1 and 2, several device