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Type: 
Journal
Description: 
This paper compares the behavior of the gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition annealing (PDA) in N2O and POCl3. A significantly higher channel mobility was measured in 4H-SiC MOSFETs subjected to PDA in POCl3 (108 cm2 V−1 s−1) with respect to N2O (19 cm2 V−1 s−1), accompanying a reduction of the interface traps density. Hence, a different temperature coefficient of the mobility and of the threshold voltage was observed in the two cases. According to structural analysis, the gate oxide subjected to PDA in POCl3 showed a different surface morphology than that treated in N2O, as a consequence of the strong incorporation of phosphorous inside the SiO2 matrix during annealing. This latter explained the instability of the electrical behavior of MOS capacitors annealed in POCl3.
Publisher: 
Springer Berlin Heidelberg
Publication date: 
1 Apr 2014
Authors: 

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Biblio References: 
Volume: 115 Issue: 1 Pages: 333-339
Origin: 
Applied Physics A