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We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization-sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers.
International Society for Optics and Photonics
Publication date: 
27 Mar 2013

Alessandra Di Gaspare, Valeria Giliberti, Roberto Casini, Ennio Giovine, Florestanto Evangelisti, Dominique Coquillat, Wojciech Knap, Sergey Sadofev, Raffaella Calarco, Massimiliano Dispenza, Claudio Lanzieri, Michele Ortolani

Biblio References: 
Volume: 8624 Pages: 862416
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI