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We investigate designed InN/GaN superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on c-plane GaN templates in situ by line-of-sight quadrupole mass spectroscopy and laser reflectivity, and ex situ by scanning transmission electron microscopy, X-ray diffraction, and photoluminescence (PL). The structural methods reveal concordantly the different interface abruptness of SLs resulting from growth processes with different parameters. Particularly crucial for the formation of abrupt interfaces is the Ga to N ratio that has to be bigger than 1 during the growth of the GaN barriers, as Ga-excess GaN growth aims at preventing the unintentional incorporation of In accumulated on the growth surface after the supply of InN, that extends the (In,Ga)N quantum well (QW) thickness. Essentially, even with GaN barriers grown under Ga-excess yielding to 1 monolayer (ML) thick QWs, there is a real discrepancy …
AIP Publishing LLC
Publication date: 
28 Sep 2016

Caroline Cheze, Marcin Siekacz, Fabio Isa, Bernd Jenichen, Felix Feix, Jakov Buller, Tobias Schulz, Martin Albrecht, Czeslaw Skierbiszewski, Raffaella Calarco, Henning Riechert

Biblio References: 
Volume: 120 Issue: 12 Pages: 125307
Journal of Applied Physics