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The paper reports on the fabrication and characterization of flexural resonators designed for resonant strain sensing and manufactured using 2 μm thick monocrystalline 3C-SiC layers grown on Silicon-On-Insulator substrates. The resonators are designed with Double-Ended-Tuning Fork geometry and actuated electrostatically using lateral electrodes fixed on the sides of the resonator tines, through coupling gaps with average width of 1.03 μm. They show excellent performance in vacuum environment with Q-factor around 30,000 and 18 dB high resonance peaks measured in open loop with DC bias voltage of 20 V. The closed-loop operation of the resonators with an external transimpedance amplifier feedback circuit is demonstrated and the stability of the resulting MEMS oscillator is analyzed using a microcontroller-based digital readout to measure its oscillation frequency. The results of the Allan deviation tests …
Publication date: 
12 Nov 2019

Luca Belsito, Matteo Bosi, Fulvio Mancarella, Matteo Ferri, Alberto Roncaglia

Biblio References: 
Journal of Microelectromechanical Systems