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In this paper, silicon nanocrystals (Si-NCs) fabricated by Chemical Vapor Deposition (CVD) are successfully integrated in a 32áMb ATMEL NOR Flash memory product, processed in a 130ánm technology platform. Different Si-NC deposition conditions are explored and the threshold voltage distributions of the arrays are correlated to the Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are related to single cell characteristics. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme.
Publication date: 
1 Sep 2008

S Jacob, B De Salvo, L Perniola, G Festes, S Bodnar, R Coppard, JF Thiery, T Pate-Cazal, C Bongiorno, S Lombardo, J Dufourcq, E Jalaguier, T Pedron, F Boulanger, S Deleonibus

Biblio References: 
Volume: 52 Issue: 9 Pages: 1452-1459
Solid-State Electronics