An effective doping technology for precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus δ-layer to be employed as dopant source. P-atoms are efficiently injected into the Si substrate by high temperature (900-1250°C) thermal treatments. Temperature dependent (100-300 K) resistivity and Hall measurements in the Van der Pauw configuration, demonstrate high activation rates (η > 80%) of injected P atoms. This bottom-up approach holds promises for the development of a mild technology for efficient doping of semiconductors.
Royal Society of Chemistry
1 Jan 2020
Journal of Materials Chemistry C