Charge trap Flash memory device including HfO 2 as charge trapping layer, Al 2 O 3 as the blocking oxide, SiO 2/Si 3 N 4/SiO 2 barrier engineered tunnel layer and TaN metal gate (BE-TAHOS stack) is here proposed and investigated. HfO 2 and Al 2 O 3 films are grown by atomic layer deposition and annealed at high temperature (1030 C) in N 2. Structural and chemical analyzes proved that BE-TAHOS stack has a good thermal stability after thermal treatment, as required in a standard semiconductor manufacturing process. From electrical analyzes, BE-TAHOS stack exhibited an improvement in the overall program/erase window when compared to a control sample including SiO 2 layer as tunnel oxide (TAHOS stack). The memory window enhancement is due to the presence of the barrier engineered tunnel layer, exploiting the effect of a symmetric barrier composed by dielectrics with different dielectric constants …