The Al-Ti based alloys give ohmic contacts on p-type 4H-SiC with reasonably low specific contact resistance (≤ 10-4 Ωcm2). Unfortunately during alloying the deposited metals go through a liquid phase [1] and contact areas lose their form. Moreover, during cooling the Al in excess segregates in Al droplets on the top of the contact surface. All that produces ohmic contacts that have not an homogeneous interface with the semiconductor and limits the minimum distance between adjacent contact areas. In previous studies it has been shown that a thin layer of metal with high melting temperature like Ni can be used as a cap on the top of the deposited Al-Ti layer for reducing or avoiding the enlargement of the melted Al-Ti film during alloying, depending on the combination of the Ni, Al and Ti thin film thicknesses [2,3]. In the same studies it was shown that it exists an optimum Ni : Al : Ti thicknesses ratios to preserve the …