The study focuses on analysing the high-level carrier lifetime ( ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the . We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z defects …