Effects of nocodazole and ionizing radiation on cell proliferation and delayed luminescence

Authors: 

I Baran, C Ganea, I Ursu, F Musumeci, A Scordino, S Tudisco, S Privitera, L Lanzanò, E Katona, V Baran, GAP Cirrone, G Cuttone, L Raffaele, LM Valastro

Correction to Addressing the Fundamental Electronic Properties of Wurtzite GaAs Nanowires by High-Field Magneto-Photoluminescence Spectroscopy

Authors: 

Marta De Luca, Silvia Rubini, Marco Felici, Alan Meaney, Peter CM Christianen, Faustino Martelli, Antonio Polimeni

Collective modes in graphene/metal interfaces probed by electron energy loss spectroscopy

Authors: 

A Politano, Gennaro Chiarello

Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase

Authors: 

Eugenio Zallo, Andrea Pianetti, Alexander S Prikhodko, Stefano Cecchi, Yuliya S Zaytseva, Alessandro Giuliani, Malte Kremser, Nikolai I Borgardt, Jonathan J Finley, Fabrizio Arciprete, Maurizia Palummo, Olivia Pulci, Raffaella Calarco

Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As

Authors: 

A Baraldit, C Ghezzi, A Parisini, A Bosacchi, S Franchi

Sistema di interrogazione di sensori FBG basato su un filtro ottico integrato a materiale composito

Authors: 

Antonio D'Alessandro, C Umeton, R Beccherelli, MA Caponero, Domenico Donisi

Optical determination of strain field in GaAsN/GaAsN: H planar heterostructures

Authors: 

ENRICO VIRGILIO Giulotto, Mario Geddo, Giorgio Guizzetti, Maddalena Patrini, A Polimeni, M Capizzi, F Martelli, S Rubini

Metal-fluoropolymer nanocomposite vapor sensors

Authors: 

Nicola Cioffi, I Farella, Luisa Torsi, Antonio Valentini

Effects of ad-atom stoichiometry and stacking faults nucleation on the structure and morphology of MOVPE-grown (100) ZnTe homoepitaxial layers

Authors: 

M Traversa, P Prete, T Di Luccio, G Scalia, L Tapfer, Nicola Lovergine, Anna Maria Mancini

L. Goux c, DJ Wouters,“Control of filament size and reduction of reset current below 10 lA in NiO resistance switching memories,”

Authors: 

F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli

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