Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As | IMM Container

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Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As

Type:

Book

Description:

Publisher:

CRC Press

Publication date:

25 Nov 2020

Authors:

A Baraldit, C Ghezzi, A Parisini, A Bosacchi, S Franchi

Biblio References:

Pages: B27-B30

Origin:

D (X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991

Link:

https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…