Substitutional and clustered B in ion implanted Ge: Strain determination

Authors: 

G Bisognin, S Vangelista, M Berti, G Impellizzeri, MG Grimaldi

Three-Dimensional Self-Assembly of Networked Branched TiO2 Nanocrystal Scaffolds for Efficient Room-Temperature Processed Depleted Bulk Heterojunction Solar Cells

Authors: 

Anna Loiudice, Giulia Grancini, Antonietta Taurino, Michela Corricelli, Maria R Belviso, Marinella Striccoli, Angela Agostiano, M Lucia Curri, Annamaria Petrozza, P Davide Cozzoli, Aurora Rizzo, Giuseppe Gigli

Electric field properties of CdTe nuclear detectors

Authors: 

Adriano Cola, Isabella Farella, AM Mancini, A Donati

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

Authors: 

M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, B Seitzinger, PK Baumann, M Heuken, S Rushworth

Optics InfoBase Conference Papers

Authors: 

Marco Trotta, Rita Asquini, Romeo Beccherelli, Antonio d'Alessandro

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

Authors: 

P Gaucci, A Valletta, L Mariucci, G Fortunato, SD Brotherton

The interface between Gd 2 O 3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths

Authors: 

Alessandro Molle, Michele Perego, Md Nurul Kabir Bhuiyan, Claudia Wiemer, Grazia Tallarida, Marco Fanciulli

Mössbauer spectroscopy study of interfaces for spintronics

Authors: 

R Mantovan, C Wiemer, A Lamperti, M Georgieva, M Fanciulli, A Goikhman, N Barantsev, Yu Lebedinskii, A Zenkevich

Perspectives and advantages of the use of excimer laser annealing for MOS technology

Authors: 

V Privitera, P Alippi, M Camalleri, M Cuscuna, G Fortunato, A La Magna, G La Rosa, A Magri, L Mariucci, E Monakhov, D Salinas, F Simon, C Spinella, BG Svensson

Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study

Authors: 

F Conzatti, M De Michielis, D Esseni, P Palestri

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