Structural change upon annealing of amorphous GeSbTe grown on Si (111)

Authors: 

V Bragaglia, B Jenichen, A Giussani, K Perumal, H Riechert, R Calarco

GaN and InN nanowires: Si and Mg doping

Authors: 

Toma Stoica, Ralph Meijers, Ratan Debnath, Thomas Richter, Hans Lueth, Raffaella Calarco, Eli Sutter, Kulandaivel Jeganathan, Michel Marso

Green luminescence in Mg-doped GaN

Authors: 

Michael A Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, R Calarco

Surface-induced effects in GaN nanowires

Authors: 

Raffaella Calarco, Toma Stoica, Oliver Brandt, Lutz Geelhaar

Epitaxial GeTe-Sb2Te3 Alloys Probed by Single Cycle THz Pulses of Coherent Synchrotron Radiation

Authors: 

V Bragaglia, A Schnegg, R Calarco, Karsten Holldack

Toward spin electronic devices based on semiconductor nanowires

Authors: 

S Heedt, I Wehrmann, K Weis, R Calarco, H Hardtdegen, D Grützmacher, Th Schäpers, C Morgan, DE Bürgler

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

Authors: 

EO Schäfer-Nolte, T Stoica, T Gotschke, FA Limbach, E Sutter, P Sutter, D Grützmacher, R Calarco

Cover Picture: Epitaxial phase‐change materials (Phys. Status Solidi RRL 11/2012)

Authors: 

Peter Rodenbach, Raffaella Calarco, Karthick Perumal, Ferhat Katmis, Michael Hanke, André Proessdorf, Wolfgang Braun, Alessandro Giussani, Achim Trampert, Henning Riechert, Paul Fons, Alexander V Kolobov

Long‐range crystal‐lattice distortion fields of epitaxial Ge–S b–T e phase‐change materials

Authors: 

Ferhat Katmis, Martin Schmidbauer, Sergiy M Bokoch, Peter Rodenbach, Henning Riechert, Raffaella Calarco

Evidence for spin to charge conversion in GeTe (111)

Authors: 

Christian Rinaldi, JC Rojas-Sánchez, RN Wang, Y Fu, S Oyarzun, L Vila, Stefano Bertoli, Marco Asa, Lorenzo Baldrati, Matteo Cantoni, J-M George, R Calarco, A Fert, Riccardo Bertacco

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