The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements

Authors: 

Nicolas Thillosen, Kathrin Sebald, Hilde Hardtdegen, Ralph Meijers, Raffaella Calarco, Simone Montanari, Nicoleta Kaluza, Jürgen Gutowski, Hans Lüth

InN and GaN/InN monolayers grown on ZnO {0001}

Authors: 

Torsten Ernst, Caroline Chèze, Raffaella Calarco

Exploring the subsurface atomic structure of the epitaxially grown phase-change material

Authors: 

J Kellner, G Bihlmayer, VL Deringer, M Liebmann, C Pauly, A Giussani, JE Boschker, R Calarco, R Dronskowski, M Morgenstern

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb 2 Te 3 alloys

Authors: 

Jos E Boschker, Xiang Lü, Valeria Bragaglia, Ruining Wang, Holger T Grahn, Raffaella Calarco

Formation of GaN nanodots on Si (1 1 1) by droplet nitridation

Authors: 

RK Debnath, T Stoica, A Besmehn, K Jeganathan, E Sutter, R Meijers, H Lüth, R Calarco

GaN and InN nanowires grown by MBE: A comparison

Authors: 

Raffaella Calarco, Michel Marso

Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature

Authors: 

E Sutter

Longer InN phonon lifetimes in nanowires

Authors: 

Núria Domènech-Amador, Ramón Cuscó, Lluís Artús, T Stoica, R Calarco

Sixteenth International Conference on Molecular Beam Epitaxy Berlin, Germany, August 22–27, 2010

Authors: 

Henning Riechert, Ted Masselink, Werner Wegscheider, T Foxon, W Braun, Y Cordier, A Semenov, A Doolittle, J Gupta, K Ando, M Tanaka, R Calarco, B Daudin, M Fanfoni, K Kishino, A Fontcuberta i Morral, A Badolato, A Stiff-Roberts, G Springholz, V Novak, C Palmstrom, H Munekata, B Jonker, H Mariette, HJ Osten, G Hollinger, A Dimoulas, J Fompeyrine, RN Kwo, K Hirakawa, AC Gossard, DG Schlom, M Walther, MC Amann, T Block, K Eberl, JS Harris, B Mayer, K Akimoto

Electrical and optical characterisation of GaN and InN nanowires

Authors: 

Thomas Richter, Michel Marso, Ralph Meijers, Ratan Debnath, Raffaella Calarco, Hans Lueth, Toma Stoica

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