About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

Authors: 

Roberta Nipoti, Alberto Carnera, Giovanni Alfieri, Lukas Kranz

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

Authors: 

Marilena Vivona, Giuseppe Greco, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Silvia Scalese, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Depth-dependent Scanning Photoelectron Microspectroscopy unravels the Mechanism of Dynamic Pattern Formation in Alloy Electrodeposition

Authors: 

Benedetto Bozzini, Matteo Amati, Tsvetina Dobrovolska, Luca Gregoratti, Ivan Krastev, Ivonne Sgura, Antonietta Taurino, Maya Kiskinova

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Authors: 

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Authors: 

Massimo Zimbone, Nicolo Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, MariaConcetta Canino, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Authors: 

Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Authors: 

Ruggero Anzalone, Nicolo Piluso, Grazia Litrico, Simona Lorenti, Giuseppe Arena, Salvo Coffa, Francesco La Via

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

Authors: 

Roberta Nipoti, Maurizio Puzzanghera, Maria Concetta Canino, Giovanna Sozzi, Paolo Fedeli

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Authors: 

Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte

Processing and characterizations for Silicon Carbide power devices

Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the material of choice for the next generation of power electronics devices.

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