Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Authors: 

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Authors: 

Massimo Zimbone, Nicolo Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, MariaConcetta Canino, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Authors: 

Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Authors: 

Ruggero Anzalone, Nicolo Piluso, Grazia Litrico, Simona Lorenti, Giuseppe Arena, Salvo Coffa, Francesco La Via

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

Authors: 

Roberta Nipoti, Maurizio Puzzanghera, Maria Concetta Canino, Giovanna Sozzi, Paolo Fedeli

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Authors: 

Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte

Processing and characterizations for Silicon Carbide power devices

Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the material of choice for the next generation of power electronics devices.

Gallium Nitride processing for high-power and high-frequency devices

Gallium Nitride (GaN) and its related AlxGa1-xN ternary alloys have excellent properties (like a wide band gap, a high critical electric field and a high electron saturation velocity) making them suitable semiconductors for high power and high frequency de

Micro WATTS - Micro WAstewaTer Treatment System using photocatalytic surfaces

The primary objective of this project is to provide a practical means to recoup and treat greywater at its source using photocatalytic surfaces activated by solar energy. This will not only result in a source of second class water, but would also a reduction in the volume of waste water discarded into the sewage infrastructure.

Funding scheme: European Regional Development Fund, Interreg Italia-Malta

Code: C1-1.1-70

Contribution: € 2.415.048

Source: 
Catania UNIT

New fully automated CVD system for 2D-TMD growth at the CNR-IMM

A new furnace-based CVD system by Planartech has been set up at the CNR-IMM @Agrate unit targeting the growth of two-dimensional transition metal dichalcogenides (MoS2, WS2, MoTe2, etc.).

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