Influence of atmospheric pressure plasma treatments on the corrosion resistance of stainless steels

Authors: 

K Brunelli, L Pezzato, E Napolitani, S Gross, M Magrini, M Dabalà

E. Napolitani, and D. De Salvador

Authors: 

AM Romano, MG Piro, G Bisognin Grimaldi

Recent Insights in the Diffusion of Boron in Silicon and Germanium

Authors: 

Salvo Mirabella, Davide De Salvador, Elena Bruno, Enrico Napolitani, Giorgia Scapellato, Massimo Mastromatteo, Giuliana Impellizzeri, Gabriele Bisognin, Simona Boninelli, Antonio Terrasi, Alberto Carnera, Francesco Priolo

Damage evolution in implanted silicon by pulsed excimer laser annealing

Authors: 

G Fisicaro, A La Magna, G Piccitto, V Privitera, K Huet, J Venturini, H Besaucele

Advances in Silicon Nanophotonics

Authors: 

Giorgia Franzó, Alessia Irrera, Maria Miritello, Simona Boninelli, Fabio Iacona, Francesco Priolo

Editorial

Authors: 

Hartmut Bracht, Giuliana Impellizzeri

CaloCube: A new-concept calorimeter for the detection of high-energy cosmic rays in space

Authors: 

Elena Vannuccini, O Adriani, A Agnesi, S Albergo, L Auditore, A Basti, E Berti, G Bigongiari, L Bonechi, S Bonechi, M Bongi, V Bonvicini, S Bottai, P Brogi, G Carotenuto, G Castellini, PW Cattaneo, R D'Alessandro, S Detti, M Fasoli, N Finetti, P Lenzi, P Maestro, PS Marrocchesi, M Miritello, N Mori, G Orzan, M Olmi, L Pacini, P Papini, MG Pellegriti, F Pirzio, A Rappoldi, S Ricciarini, P Spillantini, O Starodubtsev, F Stolzi, JE Suh, A Sulaj, A Tiberio, A Tricomi, A Trifiro, M Trimarchi, A Vedda, G Zampa, N Zampa, B Zerbo

WInSiC4AP - Wide band gap Innovative SiC for Advanced Power

The objective of the European project WInSiC4AP is to contribute in developing reliable technology bricks for efficient and cost-effective applications addressing social challenges and market segments, where Europe is a recognized global leader (e.g., automotive, avionics, railway and defence).

Source: 
Catania HQ

Electron energy dissipation model of gate dielectric progressive breakdown in n-and p-channel field effect transistors

Authors: 

S Lombardo, EY Wu, JH Stathis

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the $(4, 4) $ and $(3, 5) $ Stacking Faults

Authors: 

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco LA VIA

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