Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments

Authors: 

HM Ayedh, N Iwamoto, R Nipoti, A Hallén, BG Svensson

Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

Authors: 

Grazia Litrico, Nicolò Piluso, Francesco La Via

4H-SiC defects evolution by thermal processes

Authors: 

N Piluso, MA Di Stefano, S Lorenti, F La Via

3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

Authors: 

Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

CdTe QUANTUM DOTS NANOCOMPOSITE FILMS OBTAINED BY THERMAL DECOMPOSITION OF PRECURSORS EMBEDDED IN POLYMERIC MATRIX

Authors: 

F Antolini, L Ortolani

Point defects investigation of high energy proton irradiated SiC p+-in diodes

Authors: 

Giovanni Alfieri, Andrei Mihaila, Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Phillippe Godignon, José Millán

Properties of SiO 2/4H-SiC interfaces with an oxide deposited by a high-temperature process

Authors: 

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

DLTS study on Al+ ion implanted and 1950° C annealed pin 4H-SiC vertical diodes

Authors: 

Hussein M Ayedh, Maurizio Puzzanghera, Bengt Gunnar Svensson, Roberta Nipoti

Anomalous Fowler-Nordheim tunneling through SiO 2/4H-SiC barrier investigated by temperature and time dependent gate current measurements

Authors: 

P Fiorenza, A La Magna, M Vivona, F Giannazzo, F Roccaforte

Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC

Authors: 

P Fedeli, M Puzzanghera, F Moscatelli, RA Minamisawa, G Alfieri, U Grossner, R Nipoti

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