Ion Implantation: A Method of Producing Low-k Silicon Oxide-based Materials

Authors: 

Elisa Leoni, Domingos De Sousa Meneses, Esidor Ntsoenzok, Mariaconcetta Canino, Gabrielle Regula

Enhancement of electrical and thermal conductivity of Su-8 photocrosslinked coatings containing graphene

Authors: 

M Sangermano, L Calvara, E Chiavazzo, L Ventola, P Asinari, V Mittal, R Rizzoli, L Ortolani, V Morandi

Fully Ion Implanted Vertical pin Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Authors: 

Roberta Nipoti, Anindya Nath, Yong Lai Tian, Fabrizio Tamarri, Francesco Moscatelli, Pietro de Nicola, Mulpuri V Rao

Voice transformation algorithms with real time DSP rapid prototyping tools

Authors: 

Graziano Bertini, Federico Fontana, Diego Gonzalez, Lorenzo Grassi, Massimo Magrini

BOTDA sensor with 2-m spatial resolution over 120 km distance using bi-directional distributed Raman amplification

Authors: 

Marcelo A Soto, Stefano Faralli, Mohammad Taki, Gabriele Bolognini, Fabrizio Di Pasquale

About the role of boundary conditions on compositional imaging with a scanning electron microscope

Authors: 

PG Merli, V Morandi, F Corticelli

Th3. 3.3 High Gain And Low Noise Discrete Amplifier Based On A Second Order Raman Fibre Ring Oscillator

Authors: 

S Faralli, C Cantini, G Bolognini, F Di Pasquale, P Kim, N Park, G Sacchi

Ar Annealing at 1600° C and 1650° C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing Temperature

Authors: 

Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi, Roberta Nipoti

Al+ implanted 4h-sic p+-in diodes: Evidence for post-implantation-Annealing dependent defect activation

Authors: 

Ulrike Grossner, Francesco Moscatelli, Roberta Nipoti

Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

Authors: 

A Parisini, V Morandi, S Solmi, Pier Giorgio Merli, Damiano Giubertoni, Massimo Bersani, JA Van den Berg

Pages