Amorphous-fcc transition in Ge 2 Sb 2 Te 5

Authors: 

S Lombardo, E Rimini, MG Grimaldi, S Privitera

Role of contact bonding on electronic transport in metal–carbon nanotube–metal systems

Authors: 

Ioannis Deretzis, Antonino La Magna

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Authors: 

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Authors: 

Marilena Vivona, Patrick Fiorenza, Salvatore Di Franco, Claude Marcandella, Marc Gaillardin, Sylvain Girard, Fabrizio Roccaforte

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Authors: 

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

Authors: 

I Crupi, S Mirabella, D D’Angelo, S Gibilisco, A Grasso, S Di Marco, F Simone, A Terrasi

Nucleation and grain growth in as deposited and ion implanted GeTe thin films

Authors: 

AM Mio, E Carria, G D'Arrigo, S Gibilisco, M Miritello, MG Grimaldi, E Rimini

High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect

Authors: 

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Giovanni Bonanno

Electron energy-loss spectra of graphene oxide for the determination of oxygen functionalities

Authors: 

D D’Angelo, C Bongiorno, M Amato, I Deretzis, A La Magna, G Compagnini, SF Spanò, S Scalese

Optimization Metrics for Phase Change Memory (PCM) Cell Architectures

Authors: 

G. Servalli M. Boniardi, A. Redaelli, C. Cupeta, F. Pellizzer, L. Crespi, G. D’Arrigo, A. L. Lacaita

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