Advances in the fabrication of graphene transistors on flexible substrates

Authors: 

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Authors: 

Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Authors: 

Philipp Schuh, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Transient crystal grain nucleation in As doped amorphous silicon

Authors: 

Giovanni Mannino, Corrado Spinella, Rosa Ruggeri, Antonio Mio, Emanuele Rimini

Structure and conductance of the breakdown spot during the early stages of progressive breakdown

Authors: 

Giovanni Condorelli, Salvatore A Lombardo, Felix Palumbo, Kin-Leong Pey, Chih Hang Tung, Lei-Jun Tang

Low temperature epitaxial growth of Si and SiGe and their transfer to foreign substrate

Authors: 

R Cariou, I Massiot, R Ruggeri, N Ramay, J Tang, A Cattoni, S Collin, J Nassar, PR i Cabarrocas

Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations

Authors: 

Stefania Privitera, Antonio M Mio, Julia Benke, Christoph Persch, Emanuele Smecca, Alessandra Alberti, Emanuele Rimini

Transport properties of graphene with nanoscale lateral resolution

Authors: 

Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Charge transport in ultrathin silicon rich oxide/SiO 2 multilayers under solar light illumination and in dark conditions

Authors: 

RA Puglisi, C Vecchio, S Lombardo, S Lorenti, MC Camalleri

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Authors: 

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

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