Two-dimensional transition metal ditellurides (2D-TMTs) exhibit unique characteristics promising device applications in various technological fields, spanning from opto-and nano-electronics to memories [1] Among many 2D-TMTs, molybdenum ditelluride (MoTe2) attracts particular attention due to its polymorphic character resulting in semiconducting 2H (trigonal prismatic coordination) and metallic 1T’(distorted octahedral coordination) phases which is subjected to structural distortion to the Td phase (orthorhombic).[1-3] MoTe2 exhibits a stable biphasic character in artificially synthesizable 2H and 1T’polytypes inherently distinguished in their electronic band structure (semiconducting and metallic, respectively). Phase-engineered transition metal transition (TMT) materials that incorporate van der Waals interactions and intrinsically absent dangling bonds demonstrate the potential to design electronic and optoelectronic devices with exceptional performance.[4] However, it is not clear how they electronically interfaced with the technology relevant substrate like SiO2 or with another TMT phase, and what impact it has on an electronic device layout. Therefore, it is critically