Type:
Conference
Description:
We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.
Publisher:
IEEE
Publication date:
14 Sep 2011
Biblio References:
Pages: 278-280
Origin:
8th IEEE International Conference on Group IV Photonics