Thin detectors have been proposed to investigate the possibility to get a constant and low depletion voltage and to limit the leakage current of heavily irradiated silicon devices. In this work we compare a thin, 58 µm thick  and a typical, 300 µm thick silicon detector. We consider a high resistivity, 7× 1011 cm− 3 n-doped substrate. In order to investigate the performances of these structures, simulations have been carried out using the ISE-TCAD DESSIS device simulator. We consider evenly irradiated structures. The so called three-level model  has been used to investigate the effects of the radiation fluence on the electric field and the current of thin and typical silicon structure with an equivalent fluence of 2× 1014 cm− 2 1MeV neutrons. Moreover, the electric field of a thin non irradiated structure and a thin irradiated structure are compared using the same fluence.
1 Jan 2005
Sensors And Microsystems