-A A +A
Type: 
Journal
Description: 
Self-heating-related instabilities have been studied in p-channel polycrystalline-silicon thin-film transistors. The spatial distribution of the interface-state and fixed-oxide-charge densities generated during self-heating experiments has been analyzed and quantitatively determined by using negative-bias temperature stress experiments and 2-D numerical simulations. In addition, the observed asymmetry in the output characteristics with respect to source/drain contact reversal is also perfectly reproduced, confirming the validity of the proposed model.
Publisher: 
IEEE
Publication date: 
1 Jul 2010
Biblio References: 
Volume: 31 Issue: 8 Pages: 830-832
Origin: 
IEEE Electron Device Letters