-A A +A
In this work we will show how local substrate patterning leads to a long range controlled propagation of dislocations in SiGe films grown on Si (001) substrates. Dislocations preferentially nucleate in the inhomogeneous strain field associated with the patterned pits, and then partialize on the local (111) surfaces which form the pit sidewalls. The resulting V-shaped defects extend for several microns and effectively block the propagation of randomly nucleated dislocations which propagate in the perpendicular direction. The surface morphology and strain fields associated with the extended defects have been characterized by atomic force microscopy and μRaman spectroscopy, and the defects have been directly observed with high resolution transmission electron microscopy.
IOP Publishing
Publication date: 
8 Sep 2016

Monica Bollani, Daniel Chrastina, Riccardo Ruggeri, G Nicotra, L Gagliano, E Bonera, Valeria Mondiali, A Marzegalli, Francesco Montalenti, C Spinella, Leonida Miglio

Biblio References: 
Volume: 27 Issue: 42 Pages: 425301