We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400 C and post implantation annealing at 1600 C and 1650 C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600 C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8±0.1)× 10-9 A/cm2 at–100 V, and a break down voltage between 600 and 900V. The 1650 C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current …