In situ annealing experiments on individual group III-nitride nanowires (NWs) in a transmission electron microscope demonstrate the encapsulation of GaN wires in crystalline carbon shells in the presence of C at moderate temperatures. The complete encapsulation of GaN wires in carbon shells can be achieved when small indium metal clusters are introduced on the wire surface. No encapsulation is observed on pure GaN wires under the same conditions. The observations suggest a general processing route for the formation of semiconductor core/C-shell NW structures based on surface decoration with small metal clusters.
American Institute of Physics
26 Feb 2007
Volume: 90 Issue: 9 Pages: 093118
Applied physics letters