-A A +A
Type: 
Journal
Description: 
[en] The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in detail by combining experimental characteristics and two-dimensional numerical simulations. This structure allows an effective reduction of the kink effect and off-current, without introducing any additional series resistance. In addition, a substantial improvement in the device stability is also observed when compared to conventional TFT. The AF-TFT characteristics have been explained by considering a two transistor model.
Publisher: 
Publication date: 
1 Jan 2006
Authors: 

G Fortunato, M Cuscuna, L Mariucci, A Bonfiglietti, A Pecora, A Valletta

Biblio References: 
Volume: 48 Issue: 91 Pages: S64-S71
Origin: 
Journal of the Korean Physical Society