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Type: 
Journal
Description: 
In this paper we investigated atomic layer deposition (ALD) TiO2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality.The ALD process was performed at 295 °C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al2O3 buffer layer between TiO2 and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.
Publisher: 
Elsevier
Publication date: 
1 May 2012
Authors: 

E Cianci, S Lattanzio, G Seguini, S Vassanelli, M Fanciulli

Biblio References: 
Volume: 520 Issue: 14 Pages: 4745-4748
Origin: 
Thin solid films