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Type: 
Journal
Description: 
We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200?°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.
Publisher: 
American Physical Society
Publication date: 
10 Oct 2012
Authors: 

F Martelli, A Patanè, S Rubini, N Balakrishnan, G Pettinari, O Makarovsky, L Turyanska, MW Fay, M De Luca, A Polimeni, M Capizzi

Biblio References: 
Origin: 
Physical Review B