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An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor (MOS) transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.
American Institute of Physics
Publication date: 
18 Dec 2006

G Fortunato, L Mariucci, M Cuscunà, V Privitera, A La Magna, C Spinella, A Magri, M Camalleri, D Salinas, F Simon, B Svensson, E Monakhov

Biblio References: 
Volume: 89 Issue: 25 Pages: 253502
Applied physics letters