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Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry

Patrick Fiorenza, Corrado Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

2022-01-01

Biblio references: Volume: 1062 Pages: 160-164

Origin: Materials Science Forum

Pages