An approach to the dopant profiling in bulk specimens with the scanning electron microscope is presented. It will be shown that it is possible to use backscattered electrons, or secondary electrons produced by backscattered electrons, to obtain two dimensional information about the dopant spatial distribution in Sb-implanted silicon. The role of sample preparation, boundary condition, beam energy, and detection strategy will be extensively discussed. Experimental observation and numerical simulation highlight the capability to achieve the sensitivity and spatial resolution required to describe the dopant distribution in the high-dose near-surface region of ultrashallow junctions.