Ex-situ doping of 30 nm thick silicon-on-insulator (SOI) substrates is performed by using polymers terminated with a doping containing moiety. Poly(methylmetachrylate) polymers with a P containing moiety are used to create a phosphorus δ-layer at the interface between the Si device layer and a 10 nm thick SiO2 capping layer deposited on the SOI sample by conventional e-beam evaporation. Drive-in of the P atoms is performed by annealing the samples in a rapid thermal processing (RTP) system at temperatures (TA) ranging from 900 to 1200 °C in N2 atmosphere. Annealing time is properly selected to inject a constant P dose of ∼ 1 × 1013 cm−2 into the SOI substrate, achieving a uniform dopant concentration throughout the entire Si device layer as verified by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) measurements. Sample resistivity (ρ), carrier concentration (ne) and mobility (μ) are …